FSLB Freescale Semiconductor, Inc. (Class B)

Freescale Semiconductor (NYSE:FSL) (NYSE:FSL.B) has demonstrated an advanced CMOS technology that utilizes strained silicon-on-insulator (SOI) substrates -- a breakthrough that could deliver dramatic performance improvements and reduced power consumption for next generation semiconductor devices. Made possible by novel hybrid strain techniques, the technology offers the performance of SOI with the enhanced carrier mobility of strained silicon. Transistors based on this technology exhibit performance increases greater than 30 percent over conventional technology. These increases can in turn reduce active power consumption by more than 40 percent while maintaining performance levels. "The need to control both active and standby power consumption while continuing to improve transistor performance is driving the industry to develop creative, non-traditional scaling techniques," said Suresh Venkatesan, Freescale's director of Austin Silicon Technology Solutions. "Freescale is breaking new ground by incorporating innovative materials, structures and processes into our transistor roadmap as evidenced by this strained SOI technology breakthrough." Freescale is evaluating the technology for the 45-nm node and beyond. Initial applications for strained SOI from Freescale may include power-sensitive and high-performance products such as advanced networking equipment and gaming consoles. The technology could also eventually help Freescale's customers create dramatically smaller and more powerful entertainment electronics and intelligent portable devices. "Semiconductor companies must increasingly rely on creative R&D to meet growing demand for higher performance devices that require less power," said Joanne Itow, Semico Research Corporation's managing director for manufacturing. "Freescale's breakthrough represents a significant milestone for both SOI and strained silicon technology, and serves as a prime example of how creative innovation is helping top semiconductor companies meet stringent marketplace expectations and requirements." Freescale is an established leader in SOI techniques and one of the few companies currently manufacturing products based on the technology. About Freescale's Hybrid Strain CMOS Breakthrough CMOS compatible hybrid strained SOI technology from Freescale is demonstrated through an advanced method of selective biaxial-uniaxial strain hybridization. With this mixed strain approach, the nFET uniaxial strain can be amplified by the substrate, while the pFET can be enhanced beyond levels offered by conventional uniaxially strained silicon. This technology enables CMOS performance scaling to the 45-nm node and beyond. The technology successfully integrates strong SOI substrate-level strain with process-induced stressors, demonstrating drive performance boosts of up to 36 percent while simultaneously reducing gate leakage by 30 percent. This high performance-per-watt strained SOI technology widens the window for implementing active and standby power reduction techniques required for high-performance, power-sensitive applications. Freescale is scheduled to present a technical paper outlining this breakthrough at the 2006 VLSI Symposium on Technology in Honolulu, Hawaii, from June 13-16. About Freescale Semiconductor Freescale Semiconductor Inc. (NYSE:FSL) (NYSE:FSL.B) is a global leader in the design and manufacture of embedded semiconductors for the automotive, consumer, industrial, networking and wireless markets. Freescale became a publicly traded company in July 2004 after more than 50 years as part of Motorola Inc. The company is based in Austin, Texas, and has design, research and development, manufacturing or sales operations in more than 30 countries. Freescale, a member of the S&P 500(R), is one of the world's largest semiconductor companies with 2005 sales of $5.8 billion (USD). www.freescale.com Freescale Technology Forum The Freescale Technology Forum (FTF) is fast becoming the embedded semiconductor industry's premier developer conference. A global program, FTF events feature visionary keynote speakers, in-depth technical training, and interactive demonstrations from Freescale and leading hardware, software and tools providers. For detailed information about FTF events around the world, please go to www.freescale.com/ftf. Reader Inquiry Response: Freescale Semiconductor P.O. Box 17927 Denver, CO 80217 USA Freescale (TM) and the Freescale logo are trademarks of Freescale Semiconductor Inc. All other product or service names are the property of their respective owners. (C) Freescale Semiconductor Inc. 2006.