QROMIS, a Silicon Valley-based company, revolutionizes the
semiconductor industry with its groundbreaking QROMIS Substrate
Technology (QST®), addressing critical cost and
reliability challenges for gallium nitride (GaN) devices.
SAN ANTONIO, July 9, 2024 /PRNewswire/ -- Frost &
Sullivan recently researched the GaN semiconductors industry
and, based on its findings, recognizes QROMIS with the 2024
Global Enabling Technology Leadership Award. QROMIS is a
world-class advanced semiconductor technologies provider that
offers high performance materials solutions to help global
businesses enhance their digital transformation, improve
efficiency, and boost productivity in multiple markets, including
power and radio frequency (RF) electronics, light emitting diodes
(LEDs) and advanced displays.
QROMIS leverages its disruptive and patented QST®
substrate innovation (protected by ~300 worldwide patents) to
develop GaN devices, which reduces costs and increases the
reliability. CMOS fab-friendly and SEMI standard thickness
QST® ensures compatibility with standard semiconductor
manufacturing processes, promoting long-awaited scalability and
sustainability, enabling superior thermal conductivity, and
lowering energy consumption.
The groundbreaking QST® substrate technology has an
embedded high thermal conductivity and high mechanical strength
core material which has a very closely matched coefficient of
thermal expansion to those of GaN/AlGaN epitaxial layers over a
wide temperature range, enabling wafer breakage / stress-free,
scalable, low cost and high performance GaN power device
manufacturing on 200 mm and 300 mm mainstream CMOS production
platforms. These unique features enable not only the
mainstream lateral GaN power devices but also the long awaited
commercial vertical GaN power switches and rectifiers suitable for
high voltage and high current applications presently dominated by
Si IGBTs and SiC power FETs and diodes.
QST®, which is assembled and manufactured in
traditional CMOS fabs, is very similar to mainstream
Silicon-on-Insulator (SOI) substrates with respect to manufacturing
processing and cost, and utilizes energy efficient state-of-the-art
semiconductor process tools with an over 98% yield and a process
cycle time of less than 7 days. This is a critical component of the
QST® innovation which was carefully designed per the
projected cost and sustainability / net zero requirements in the
industry, and very different than manufacturing of native GaN
substrates or non-native silicon carbide (SiC) and sapphire
substrates.
One of the critical features of QST® technology is
the enablement of high yielding and low cost GaN epitaxy growth
process via robust wafer shape control, epitaxy uniformity and
elimination of costly and complex strain management layers which
result in reduction of epitaxy growth time by 50%. This is an
extremely important and leap-forward achievement for overall cost
reduction of GaN devices.
One of the critical factors behind QROMIS' success is its
commitment to driving GaN technology adoption across multiple
market segments. The company collaborates with global industrial
partners to leverage their manufacturing platforms, securing the
scalability and widespread adoption of QST® platform
which has proven to be a game-changer in the industry, allowing GaN
power devices to exceed the 650 V threshold to 2000 V and beyond on
200 mm and 300 mm diameters while maintaining high performance and
reliability. In addition to GaN power electronics, this
groundbreaking and disruptive technology is also well positioned to
enable significant advancements in GaN RF and microLED
applications, and all applications can be manufactured in the same
platform for business expansion, economies of scale and
sustainability.
"Frost & Sullivan commends QROMIS for its innovative
QST®, which effectively addresses scalability, cost and
reliability challenges in the GaN semiconductors market.
QST® will play a crucial role in expediting the
commercialization of highly reliable GaN devices while showcasing
versatility in applications and demonstrating scalability for
future advancements," said Prabhu
Karunakaran, industry principal for the semiconductors
program at Frost & Sullivan.
The company has positioned itself as an innovation leader in the
substrate market and enables the development of high-quality GaN
power electronics in variety of device architectures on 200 mm
diameter platform (lateral and vertical power switches extending
from 100 to 2000 V and beyond, wafer-level monolithic ICs and
rectifiers) that meet the stringent requirements of modern
applications and the ever-evolving market needs. Additionally,
QROMIS continues to expand its technology roadmap with transition
its process technology platform to 300 mm QST® wafers
(sampling starting in second half of 2024). This strategic move
will further enhance cost reduction and address challenges of
accessing to the most advanced 300 mm device manufacturing
processes and tools (such as high-resolution lithography) which is
critical for next-generation GaN power, RF and microLED
applications.
By advancing its technology to support larger wafer sizes,
QROMIS is poised to disrupt the GaN market and drive accelerated
growth. This is well ahead of some of the competing technologies,
which are not expected to launch 300 mm wafer-based GaN in the
short-term. The company's forward-thinking approach gives it a
critical competitive advantage that its competitors are unlikely to
replicate, ensuring that its technology will remain at the
forefront of innovation in the long term.
"QROMIS is building on its early commercialization success by
consistently demonstrating efforts to innovate, create, and focus
on diverse applications, accelerating GaN penetration in the power,
RF, and microLED markets. Consequently, the company is
well-positioned to experience continued growth above that of the
GaN devices market," noted Karunakaran.
Each year, Frost & Sullivan presents this award to a company
that develops a pioneering technology that enhances current
products and enables new product and application development. The
award recognizes the high market acceptance potential of the
recipient's technology.
Frost & Sullivan Best Practices awards recognize companies
in various regional and global markets for demonstrating
outstanding achievement and superior performance in leadership,
technological innovation, customer service, and strategic product
development. Industry analysts compare market participants and
measure performance through in-depth interviews, analyses, and
extensive secondary research to identify best practices in the
industry.
About Frost & Sullivan
For six decades, Frost & Sullivan has been world-renowned
for its role in helping investors, corporate leaders, and
governments navigate economic changes and identify disruptive
technologies, megatrends, new business models, and companies to
action, resulting in a continuous flow of growth opportunities to
drive future success. Contact us: Start the discussion.
Contact:
Ashley Shreve
About QROMIS
QROMIS, Inc., founded in 2015 by Cem Basceri and Vladimir
Odnoblyudov, is a privately-held fabless technology innovator
headquartered in Santa Clara,
California. It is focused on energy efficient and
high-performance wide bandgap (WBG) semiconductor materials
solutions which dramatically reduce global energy use and
consumption.
As a rapidly growing Silicon Valley-based fabless company,
QROMIS, with its manufacturing partners and licensees - Vanguard
International Semiconductor Corp. (VIS) and Shin-Etsu Chemical Co.,
Ltd. - is one of the premier players in the rapidly growing,
multi-billion dollar energy efficient gallium nitride (GaN)
electronics industry with its disruptive and patented engineered
substrate innovation called QST® (QROMIS Substrate
Technology), enabling an unmatched cost, performance and
application scale for GaN power, RF, microLED applications.
Commercial 200 mm QST® substrates and
GaN-on-QST® epitaxy wafers are currently available from
QROMIS and Shin-Etsu Chemical (sampling of 300 mm QST®
starting in Q4 2024) for high performance GaN power, RF and
microLED device applications. In parallel, VIS, as a pure-play
foundry service provider, is in production of 200 mm Gen1
GaN-on-QST® 650V power devices for all industry players.
Gen2 650V devices, designed for industrial and automotive
applications, will be launched in second half of 2024 followed by
1200 V devices in 2025.
Contact:
Kimberley Wenger
(kim@qromis.com)
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