Infineon Announces Industry's First High-Performance LDMOS RF Power Transistors in Copper-Based Open-Cavity Plastic Packages for
June 17 2008 - 1:59PM
Marketwired
NEUBIBERG, GERMANY and ATLANTA, GA (NYSE: IFX) announced a new
family of RF power transistors in an innovative open-cavity plastic
package with a copper base. The new EPOC� (Enhanced Plastic
Open-Cavity) package offers a 12 percent improvement in thermal
resistance due to the better thermal conductivity of copper,
allowing superior thermal and RF performance that are similar to
traditional ceramic packages, but at a lower total cost and with
improved reliability. With its EPOC package, thin-die and
proprietary die-attach technologies, Infineon achieves the best
thermal performance with high reliability and consistency for a
high-volume cellular infrastructure market.
Based on Infineon's advanced LDMOS (laterally diffused
metal-oxide semiconductor) process technology, the new transistors
are ideally suited for use in power amplifiers in high-performance
cellular infrastructure applications. They are also the industry's
first RF power transistors to be available in this type of
environmentally friendly package.
Until now, high-performance RoHS-compliant RF power transistors
have only been available in ceramic packages with gold-plated
leads. Mainstream methods for lead-free assembly of such packages
typically involve complicated clamping designs, custom soldering
profiles and assembly processes using lead-free solders, or
expensive de-golding operations. The Infineon open-cavity plastic
package provides an alternative to these, and can achieve
significant manufacturing cost savings. For example, de-golding can
cost between $2 and $8 per package, depending on the number of
leads. Eliminating that procedure can translate into a saving of 10
to 25 percent in total production costs for a typical 120 W
transistor. In addition, the superior thermal performance of the
open-cavity plastic package lowers operating junction temperatures
by 5 percent (typical), and results in higher reliability, making
the new RF power transistors an ideal solution for the new
generation of tower-mounted cellular base stations.
"The dynamics of the cellular market are placing continued price
pressures on the base station amplifier market, but performance
continues to be a key consideration in RF power amplifier design,"
said Helmut Vogler, Vice President and General Manager for RF
Power, Infineon Technologies. "Therefore, the key goal in the
design of these product families was to maintain high performance
in an EPOC package for a total lower cost. With them, designers
will be able to create the smaller, more energy-efficient power
amplifiers that are required by wireless system operators as they
build out base station infrastructure for advanced mobile
communications."
Device Details
Operating frequencies of the new LDMOS devices range from 920
MHz to 1880 MHz, covering all the typical modulation formats with
average output power levels of 25 W and 50 W.
Operating at 28 V, the PTFA091201GL and PTFA091201FL provide a
typical gain of 18.5 dB and 44 percent efficiency at 50 W average
output power under EDGE signal conditions. These transistors are
ideal for GSM/EDGE applications in the 920 MHz - 960 MHz frequency
band.
The PTFA181001GL and PTFA181001HL transistors provide a typical
gain of 17 dB and 27.5 percent efficiency at 25 W average output
power under WCDMA signal conditions operating at 28 V. These
transistors are ideal for WCDMA and GSM/EDGE applications in the
1805 MHz -1880 MHz frequency band.
Availability
Production quantities of the new LDMOS RF power transistors will
be available in the third quarter of 2008.
Infineon is showing its new family of LDMOS RF power transistors
for cellular infrastructure applications in Booth #1216 at the IEEE
MTT-S International Microwave Symposium, June 16 - 19, 2008, in
Atlanta, Georgia.
About Infineon
Infineon Technologies AG, Neubiberg, Germany, offers
semiconductor and system solutions addressing three central
challenges to modern society: energy efficiency, communications,
and security. In the 2007 fiscal year (ending September), the
company reported sales of Euro 7.7 billion (including Qimonda sales
of Euro 3.6 billion) with approximately 43,000 employees worldwide
(including approximately 13,500 Qimonda employees). With a global
presence, Infineon operates through its subsidiaries in the U.S.
from Milpitas, CA, in the Asia-Pacific region from Singapore, and
in Japan from Tokyo. Infineon is listed on the Frankfurt Stock
Exchange and on the New York Stock Exchange (ticker symbol:
IFX).
Further information is available at www.infineon.com.
This news release is available online at
www.infineon.com/press/
For the Trade Press: Worldwide Headquarters Christoph von
Schierstaedt +49 89 234 22984 vonschierstaedt@infineon.com U.S.A.
Agnes Toan +1 408 503 2587 agnes.toan@infineon.com Asia Chi Kang
David Ong +65 6876 3070 david.ong@infineon.com Japan Hirotaka
Shiroguchi +81 3 5745 7340 hirotaka.shiroguchi@infineon.com
Investor Relations EU/APAC/USA/CAN +49 89 234 26655
investor.relations@infineon.com
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