Toshiba Memory Corporation Develops World's First QLC 3D Flash Memory
June 27 2017 - 9:53PM
Business Wire
Achieves World’s Largest Capacity of 1.5TB in a
Single Package with BiCS FLASH™ chip
Toshiba Memory Corporation, the world leader in memory
solutions, today announced development of the world’s first[1] BiCS
FLASH™ three-dimensional (3D) flash memory[2] with a stacked cell
structure. The newest BiCS FLASH™ device is the first to deliver
4-bit-per-cell (quadruple-level cell, QLC) technology, advancing
capacity beyond that of triple-level cell (TLC) devices and pushing
the boundaries of flash memory technology.
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QLC 3D Flash Memory (Photo: Business
Wire)
Multi-bit cell flash memories store data by managing the number
of electrons in each individual memory cell. Achieving QLC
technology posed a series of technical challenges, as increasing
the number of bit-per-cell by one within same electron count
requires twice the accuracy of TLC technology. Toshiba Memory has
drawn on its advanced circuit design capabilities and
industry-leading 64-layer 3D flash memory process technology to
create the QLC 3D flash memory.
The prototype features the world’s largest die capacity[3] (768
gigabits/96 gigabytes) with 64-layer 3D flash memory process.
Shipment of prototypes to SSD and SSD controller vendors for
evaluation and development purposes started in early June.
The QLC 3D flash memory also enables a 1.5-terabyte (TB) device
with a 16-die stacked architecture in a single package - the
industry’s largest capacity[4]. Samples of this groundbreaking
device will be showcased at the 2017 Flash Memory Summit in Santa
Clara, California, United States, from August 7-10.
Toshiba Memory already mass produces 64-layer 256-gigabit
(32-gigabytes) devices, and as it expands mass production it will
continue to demonstrate industry leadership by advancing technology
development. Focused on meeting growing demand for high density,
smaller chip size flash memory solutions, the new QLC device
targets such applications as enterprise SSD, consumer SSD and
memory cards.
Note:1. Source: Toshiba Memory Corporation, as of June 28,
2017.2. A structure stacking Flash memory cells vertically on a
silicon substrate to realize significant density improvements over
planar NAND Flash memory, where cells are formed on the silicon
substrate.3. Source: Toshiba Memory Corporation, as of June 28,
2017.4. Source: Toshiba Memory Corporation, as of June 28,
2017.
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Toshiba Memory CorporationKota Yamaji, +81-3-3457-3473Business
Planning Divisionsemicon-NR-mailbox@ml.toshiba.co.jp