IXYS Corporation (NASDAQ:SYXI) announces the expansion of its offering of 500V and 1000V Depletion-Mode Power MOSFETs, including new current ratings, package options and reduced cost. This family of Power MOSFETs operate in a 'normally-on' mode, not requiring energy or gate voltage for turn on. The operating mode, with internal diode and enhanced linear operating capability make them ideal for dynamic loads applications, current control for current sources and current regulators and biasing off the high voltage DC line in power systems. Fabricated using IXYS' low on-resistance HDMOS(TM) process, they provide for simplified control and reduced 'high line' voltage dissipation when used for line interface in off-line applications. Ideal applications include current regulation, solid-state relays, level shifting, load switch, active loads, start-up circuits and active power filters. These devices shine in high energy efficiency applications as a 'normally-on' switch since they do not require energy or voltage for turn-on. With the high degree of current regulation, these devices can act as active inductors with high dynamic impedance in power filter applications to limit voltage and current noise and spikes. These unique MOSFETs can also be used as active circuit protection to limit current flow in the event of an overload or short-circuit. In high voltage applications, Depletion-Mode Power MOSFETs are ideal for reducing power dissipation. A resistor normally used in these types of applications experiences dissipation proportional to the square of the input voltage, reducing efficiency and increasing cost due to the need for high cost power resistors. Depletion-Mode Power MOSFETs can be used to replace the line interface resistor with a near constant current source, reducing power dissipation, cost and circuit board area. 500V versions include the IXTY02N50D (TO-251), IXTU02N50D (TO-252) and the IXTP02N50D (TO-220) rated at 200mA, and the IXTH20N50D (TO-247) and IXTT20N50D (TO-268) rated at 20A. 1000V versions include the IXTY01N100D (TO-251), IXTU01N100D (TO-252) and the IXTP01N100D (TO-220) rated at 100mA, and the IXTH10N100D (TO-247) and IXTT10N100D (TO-268) rated at 10A. Further information regarding IXYS Depletion-Mode Power MOSFETs and other products can be found online at www.ixys.com. Any statements contained in this press release that are not statements of historical fact, including the performance, ruggedness, and suitability of products for various applications, may be deemed to be forward-looking statements. There are a number of important factors that could cause the results of IXYS to differ materially from those indicated by these forward-looking statements, including, among others, risks detailed from time to time in the Company's SEC reports, including its Form 10-Q for the quarter ended September 30, 2005. The Company undertakes no obligation to publicly release the results of any revisions to these forward-looking statements.
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