IXYS Expands Range of High Power Depletion-Mode MOSFETs
January 17 2006 - 12:52PM
Business Wire
IXYS Corporation (NASDAQ:SYXI) announces the expansion of its
offering of 500V and 1000V Depletion-Mode Power MOSFETs, including
new current ratings, package options and reduced cost. This family
of Power MOSFETs operate in a 'normally-on' mode, not requiring
energy or gate voltage for turn on. The operating mode, with
internal diode and enhanced linear operating capability make them
ideal for dynamic loads applications, current control for current
sources and current regulators and biasing off the high voltage DC
line in power systems. Fabricated using IXYS' low on-resistance
HDMOS(TM) process, they provide for simplified control and reduced
'high line' voltage dissipation when used for line interface in
off-line applications. Ideal applications include current
regulation, solid-state relays, level shifting, load switch, active
loads, start-up circuits and active power filters. These devices
shine in high energy efficiency applications as a 'normally-on'
switch since they do not require energy or voltage for turn-on.
With the high degree of current regulation, these devices can act
as active inductors with high dynamic impedance in power filter
applications to limit voltage and current noise and spikes. These
unique MOSFETs can also be used as active circuit protection to
limit current flow in the event of an overload or short-circuit. In
high voltage applications, Depletion-Mode Power MOSFETs are ideal
for reducing power dissipation. A resistor normally used in these
types of applications experiences dissipation proportional to the
square of the input voltage, reducing efficiency and increasing
cost due to the need for high cost power resistors. Depletion-Mode
Power MOSFETs can be used to replace the line interface resistor
with a near constant current source, reducing power dissipation,
cost and circuit board area. 500V versions include the IXTY02N50D
(TO-251), IXTU02N50D (TO-252) and the IXTP02N50D (TO-220) rated at
200mA, and the IXTH20N50D (TO-247) and IXTT20N50D (TO-268) rated at
20A. 1000V versions include the IXTY01N100D (TO-251), IXTU01N100D
(TO-252) and the IXTP01N100D (TO-220) rated at 100mA, and the
IXTH10N100D (TO-247) and IXTT10N100D (TO-268) rated at 10A. Further
information regarding IXYS Depletion-Mode Power MOSFETs and other
products can be found online at www.ixys.com. Any statements
contained in this press release that are not statements of
historical fact, including the performance, ruggedness, and
suitability of products for various applications, may be deemed to
be forward-looking statements. There are a number of important
factors that could cause the results of IXYS to differ materially
from those indicated by these forward-looking statements,
including, among others, risks detailed from time to time in the
Company's SEC reports, including its Form 10-Q for the quarter
ended September 30, 2005. The Company undertakes no obligation to
publicly release the results of any revisions to these
forward-looking statements.
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